Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon.

Sub-mA threshold 1.3 μm CW lasing from electrically pumped micro-rings grown on (001) Si

We demonstrate the first electrically pumped quantum-dot micro-ring lasers epitaxially grown on (001) silicon. Continuous-wave lasing around 1.3 μm was achieved with ultra-low thresholds as small as 0.6 mA and maximum operation temperatures up to 100°C. OCIS codes: (230.5590) Quantum-well, -wire and -dot devices; (140.5960) Semiconductor lasers; (140.3948) Microcavity devices; (160.3130) Integr...

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.

We report the first operation of an electrically pumped 1.3-μm InAs/GaAs quantum-dot laser epitaxially grown on a Si (100) substrate. The laser structure was grown directly on the Si substrate by molecular beam epitaxy. Lasing at 1.302 μm has been demonstrated with threshold current density of 725 A/cm2 and output power of ~26 mW for broad-area lasers with as-cleaved facets at room temperature....

Electrically pumped continuous-wave 1.3  μm quantum-dot lasers epitaxially grown on on-axis (001)  GaP/Si.

We demonstrate the first electrically pumped continuous-wave (CW) III-V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as the active region and an intermediate GaP buffer between the silicon and device layers. Broad-area lasers with uncoated facets achieve room-temperature lasing with threshold current ...

Optically pumped 1.3  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.

Direct integration of high-performance laser diodes on silicon will dramatically transform the world of photonics, expediting the progress toward low-cost and compact photonic integrated circuits (PICs) on the mainstream silicon platform. Here, we report, to the best of our knowledge, the first 1.3 μm room-temperature continuous-wave InAs quantum-dot micro-disk lasers epitaxially grown on indus...

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources